Best Presentation Award (Oral)
Plasma Science
*Fumiyoshi Tochikubo, Yujiro Ando,
Naoki Shirai and Toshi Uchida
*Tokyo Metropolitan University
“Electrolyis with atmospheric pressure glow discharge as a plasma electrode”

Nitride Semiconductors

*Fumitsugu Fukuyo, Shunsuke Ochiai,
Hideto Miyake, Kazumasa Hiramatsu,
Harumasa Yoshida and Yuji Kobayashi
*Mie University
“Growth of AlGaN MQWs as a Target for Deep-UV-Light Sources “


*Ayar Al-Zubaidi, Yosuke Ishii,
Tomohiro Matsushita, Saki Yamada,
and Shinji Kawasaki
*Nagoya Institute of Technology
“Ion Accessibility and the Resulting Electrical Double Layer Capacitance of Different Electrolytes Inside Open-end SWCNT”

Best Presentation Award (Poster)
Plasma Science
*Kunihiro Kamataki, Kazunori Koga,
Giichiro Uchida, Naho Itagaki, Hyunwoong Seo and Masaharu Shiratani
*Kyushu University
“Interaction between amplitude modulated reactive plasmas and nanoparitcles grown in the plasmas”

Nitride Semiconductors

*Takuma Takimoto, Koji Takeshita,
Seiji Nakamura and Tsugunori Okumura
*Tokyo Metropolitan University
“Electrical Characteristics of AlGaN/GaN HEMT with Plasma Induced Damages”


*Katsunori Makihara, Hidenori Deki,
Mitsuhisa Ikeda and Seiichi Miyazaki
*Nagoya University
“Formation of One-Dimensionally Self-Aligned Si-based Quantum Dots on Untrathin SiO2 and Its Application to Light Emitting Diodes “


*Program is subject to change.


Please click the above to download the program.

3/4(Sun) | 3/5(Mon) | 3/6(Tue) | 3/7(Wed) | 3/8(Thu)
Poster Session 1 | Poster Session 2 | Poster Session 3

Mar. 4 (Sun)
Tutorial course includes fundamentals as well as current topics that would attract researchers in the each fields.
Assumed participants are not just the graduate students and beginners in the company, but also specialists in other fields and entrepreneurs of the start-ups.
12:30- Registration
Tutorial Plasma Science 1,2
Chair:M. Aramaki
(Nagoya Univ., Japan)
<Room B>
13:00-13:45 A. Kono (Nagoya Univ., Japan)
"Optical Diagnostics and Monitoring of Processing Plasmas"
13:45-14:30 U. Czarnetzki (Ruhr-Univ. Bochum, Germany)
"Radio-Frequency Plasmas"
14:30-14:40 Break
Tutorial Nitride Semiconductors 1,2
Chair:H. Amano(Nagoya Univ., Japan)
<Room B>
14:40-15:25 H. Amano (Nagoya Univ., Japan)
"Nitride-Based Visible LEDs"
15:25-16:10 A. Khan (Univ. of South Carolina, USA)
"III-Nitride Technology, it’s requirements and commercialization"
16:10-16:20 Break
Tutorial Nanomaterials 1,2
Chair: M. Hiramatsu (Meijo Univ., Japan)
<Room B>
16:20-17:05 J. G. Han (Sungkyunkwan Univ.,Korea)
"Fundamental and advanced plasma processes for thin film design and synthesis"
17:05-17:50 M. Hiramatsu (Meijo Univ., Japan)
"Carbon Nanostructures: plasma synthesis and characterization"
18:00-19:30 Welcome Party
(Student Cafeteria III, Chubu University)

Mar. 5 (Mon)
9:00- Registration
Chair:H. Masuda (Nagoya Inst. of Tech.,Japan)
<Room S>
9:30-9:45 Opening
<Guest Address>
N. Kimura (Director for Regional R&D Promotion, Ministry of Education, Culture, Sports, Science and Technology, Japan)
<Organizer Address>
S. Kato (Tokai Region Knowledge Cluster Headquarters, Aichi Science & Technology Foundation, Japan)
<ISPlasma2012 Organizing Committee Chair Address>
M. Hori (Nagoya Univ., Japan)
9:45-9:55 Opening Talk
Y. Ohtsuka (Tokai Region Knowledge Cluster Headquarters, Aichi Science & Technology Foundation, Japan)
9:55-10:25 Knowledge Cluster Lecture
Masaru Hori (Nagoya Univ., Japan)
10:25-10:40 Break
Plenary/Keynote Lecture
Chair:H. Amano (Nagoya Univ., Japan)
<Room S>
10:40-11:20 Plenary Lecture
Atsuo Iiyoshi (Chubu Univ., Japan)
"How to Bring the Power of the Sun down to the Earth
~Fusion Plasma and Solar Energy Research~"
11:20-11:55 Keynote Lecture
Y. Nanishi (Ritsumeikan Univ., Japan/Seoul National Univ., Korea)
"Importance of Advanced Plasma for Frontier Nitride Semiconductor Technologies"
11:55-12:30 Keynote Lecture
P. Kamat (Univ. of Notre Dame, USA)
"Light Energy Conversion with Nanostructure Assemblies"
12:30-13:15 Lunch
13:15-14:45 Poster Session 1
  Plasma Science 1
Plasma Sources
and Diagnostics I
Chiar:K. Nakamura
(Chubu Univ., Japan)
<Room A>
Nitride Semiconductors 1
Growth of Nitrides
Chair:Y. Nanishi
(Ritsumeikan Univ., Japan/
Seoul National Univ., Korea)
<Room B>
Nanomaterials 1
Nanocarbon Materials
Chair:Y. Suda
(Toyohashi Univ. of
Tech., Japan)
<Room C>


Invited Lecture
R. P. Brinkmann (Ruhr-Univ. Bochum, Germany)
"Active plasma resonance spectroscopy − electromagnetic vs. electrostatic concepts "


Invited Lecture
T. Hashimoto (Sixpoint Materials, Inc., USA)
"Improved crystal quality of bulk GaN grown by the ammonothermal method"


Invited Lecture
Y. Awano (Keio Univ., Japan)
"Remote Plasma CVD technologies for Carbon based LSI interconnects"

5p-A02OA (2148)
Y. Liang (Chubu Univ., Japan)
"Curling probe monitoring of wall condition in plasma processing"
5p-B02OB (2422)
N. Okada (Yamaguchi Univ., Japan)
"Optical properties of multiple quantum wells on GaN layers composed of {10-11} and m-facets structure"
5p-C02OC (2416)
H. Tanoue (Toyohashi Univ. of Tech., Japan)
"Patterning of Tetrahedral Amorphous-Carbon Film by Electron Beam Lithography and Pick Up from Si-Wafer in Focused Ion Beam System"
5p-A03OA (2166)
I. Ganachev ( Shibaura Mechatronics Corp.,Japan)
"Power dependence of electron dnesity profiles in surface-wave plasma studied by self-consistent numerical simulation with local plasma kinetics"
5p-B03OB (2327)
S. Park (Seoul National Univ., Korea)
"Effects of high temperature GaN nucleation layers grown with different carrier gases on a-plane GaN by metal organic chemical vapor deposition"
5p-C03OC (2159)
K. Yasuda (Nagoya Univ., Japan)
"Changes in crystalline structures of initial growth surfaces of carbon nanowalls"
5p-A04OA (2206)
A. Fukushima (Nagoya Univ., Japan)
"Relationship between silicon thin film property and flux ratio of H radical to silicon growth precursor in SiH4/H2 plasma CVD"
5p-B04OB (2223)
Y. Ryu (Kyushu Univ., Japan)
"Relationship between etch pits and threading dislocations in AlN grown on a sapphire substrate"
5p-C04OC (2189)
G. Kalita (Chubu Univ., Japan)
"Synthesis of graphene by surface wave microwave plasma CVD for transparent electrode applications"
16:15-16:35 Break
  Plasma Science 2
Plasma Sources
and diagnostics II
Chair:R. P. Brinkmann
(Ruhr-Univ., Germany)
<Room A>
Nitride Semiconductors 2
Optical Device and
Chair:T. Hashimoto
(SixPoint Materials, Inc., USA)
<Room B>
Nanomaterials 2
Porous Materials
Chair:M. Bratescu
(Nagoya Univ., Japan)
<Room C>


Invited Lecture
Vinu L. Venkatraman (EPFL, Switzerland)
"Chip-scale rubidium dielectric barrier discharge lamp for miniature atomic clocks and magnetometers"

5p-B05OB (2034)
L. Lu (Nagoya Inst. of Tech., Japan)
"Significant variation of Electroluminescence emission with different barriers of AlxGa1-xN multiple-quantum-well in deep ultraviolet light-emitting diodes"


Invited Lecture
S. Inagaki (Toyota Central R&D Labs., Inc., Japan)
"Nanoporous Organosilica Hybrids for Energy-related Applications"

5p-A06OA (2381)
F. Tochikubo (Tokyo Metropolitan Univ., Japan)
"Electrolysis with atmospheric pressure glow discharge as a plasma electrode"
5p-B06OB (2405)
F. Tuomisto (Aalto Univ., Finland)
"In-grown point and extended defects in PA-MBE GaN and InN"
5p-C06OC (2283)
T. Kanda (Nagoya Univ., Japan)
"Vertical Lamination of Carbon Nanowalls by Two-step Growth Method"
5p-A07OA (2215)
M. Blajan (Shizuoka Univ., Japan)
"Diagnostics of microplasma spatial and temporal distribution by emission spectroscopy"
5p-B07OB (2433)
F. Fukuyo (Mie Univ., Japan)
"Growth of AlGaN MQWs as a Target for Deep-UV-Light Sources"
5p-C07OC (2019)
E. Omurzak (Kumamoto Univ., Japan)
"Hollow carbon nano-onions by the pulsed plasma in liquid with tunable morphology and composition"

Mar. 6 (Tue)
9:10- Registration
  Plasma Science 3
Deposition and
Modification of Thin Film
Chair:M. Goeckner
(Univ. of Texas at Dallas, USA)
<Room A>
Nitride Semiconductors 3
Electron Device I
(The Hong Kong Univ. of
Science and Tech., China)
<Room B>
Nanomaterials 3
Energy Generation/
Storage Devices
Chair:N. Zettsu
(Nagoya Univ., Japan)
<Room C>


Invited Lecture
A. Ito (National Inst. for Fusion Science, Japan)
"Formation and Classification of Amorphous Carbon by Molecular Dynamics Simulation"


Keynote Lecture
T. Palacios (Massachusetts Inst. of Tech., USA)
"GaN Transistors: Transforming Electronics from THz to KV"


Invited Lecture
H. Nishihara (Tohoku Univ., Japan)
"Nanocarbons for energy storage applications"

6a-A02OA (2426)
S. Chen (Nagoya Univ., Japan)
"The role of hydrogen radical on plasma damaged gallium nitride"
6a-B02OB (2302)
T. Kubo (Nagoya Inst. of Tech., Japan)
"Characterization of aluminum oxide deposited on GaN using ozone-based atomic layer deposition"
6a-C02OC (2005)
A. Al-zubaidi (Nagoya Inst. of Tech., Japan)
"Ion Accessibility and the Resulting Electrical Double Layer Capacitance of Different Electrolytes Inside Open-end SWCNT"
6a-A03OA (2242)
C. Lin (National Dong Hwa Univ., Taiwan)
"ZrO2 Resistive Switching Memory Fabricated on PES Flexible Substrate"
6a-B03OB (2162)
U. Honda (Aichi Inst. of Tech. Japan)
"Comparision of deep levels in n-GaN grown by MOCVD on sapphire substrates with LT-AlN and GaN buffer layers
6a-C03OC (2176)
H. Seo (Kyushu Univ., Japan)
"The improvement on the adhesion of Si nanoparticles
for Si quantum dot-sensitized solar cells"
Plasma Science 4
Etching Process
Chair:A. Ito
(National Inst. for
Fusion Science, Japan)
<Room A>
Nitride Semiconductors 4
Device Processing
Chair:Chair:M. Yamaguchi
(Nagoya Univ., Japan)
<Room B>
Nanomaterials 4
Surface Modification/
Surface Functionalization
Chair:M. Shima
 (Gifu Univ., Japan)   
<Room C>


Invited Lecture
R. Bruce (IBM T. J. Watson Research Center, USA)
"Plasma-Polymer Interactions For Nanoscale Patterning Of Materials"


Invited Lecture
K. Chen (The Hong Kong Univ. of Science and Tech.,China)
"Fluorine Plasma Ion Implantation: a GaN Normally-off HEMT Technology"


Invited Lecture
P. Mayrhofer (Montanuniversitaet Leoben, Austria)
"Computational Design and Experimental Study of Transition-Metal-Aluminum-Nitride Thin Films"


Invited Lecture
M. Goeckner (Univ. of Texas at Dallas, USA)
"Plasma chemistry and film growth in a complex organic system"

6a-B05OB (2163)
M. Niibe (Univ. of Hyogo, Japan)
"Damage Analysis of n-GaN Crystals Etched with He and N2 Plasma"
6a-C05OC (2004)
H. Tamagawa (Gifu Univ., Japan)
"Bending controllability of Nafion-based IPMC coated with MnO2-coated CMC"
6a-A06OA (2077)
E. Kunnen (imec, Belgium)
"Influence and evolution of 193i resist composition during VUV exposure"
6a-B06OB (2044)
K. Hagiwara (Aichi Inst. of Tech., Japan)
"Carbon related local vibration mode in a (1-101)AlGaN grown on a (111)Si substrate"
6a-C06OC (2230)
N. Zettsu (Nagoya Univ., Japan)
"PS@Au Plasmonic Nanoshells with Conical Shape for Highly-sensitive NIR-light responsible LSPR-sensor"
12:10-13:00 Lunch
13:00-14:30 Poster Session 2
Industry-Academia- Government Collaboration 1
Research Hub Establishment toward Sustainable Development
Chair:M. Takahashi (Chubu Univ., Japan)
<Room S>
Registratin Fee:Free Simultaneous Interpretation Latest Program Download

*You can download the presentation data from the link below.
14:30-14:55 Keynote Lecture
T. Koljonen (VTT Technical Research Centre of Finland, Finland)
“Instruments for creating an innovation hot spot”
14:55-15:20 Keynote Lecture
S. Ohmori (YRP International Alliance Inst., Japan)
”R&D Promotions at Yokosuka Research Park”
15:20-15:45 Keynote Lecture
Y. Tai (Industrial Technology Research Institute, Taiwan)
"How does ITRI do for Formation of Industrial-Academia-Government Collaboration
A case of TAS (Taiwan Aerospace Supply chain Alliance) Formation"
15:45-16:10 Keynote Lecture
T. Degawa (TECHNO INTEGRATION Co. Ltd, Japan)
"The trend of development and start‐up sites in the world and Japan
―The issues, competitiveness and prospect of innovatio in the context of MOT―"
16:10-16:35 Keynote Lecture
W. Izumiya (Sangyo Times, Inc., Japan)
*The presentation data of Mr. Izumiya is not released through website.
"It should be driven forward to establish the domestic R&D Hubs
―Tokai Region as a Potential Location―"
16:35-16:50 Break
Industry-Academia-Government Collaboration2
Research Hub Establishment toward Sustainable Development
Chair:M. Takahashi (Chubu Univ.,Japan)
<Room S>
Registratin Fee:Free Simultaneous Interpretation Latest Program Download


Panel Discussion
Establishment of Global Research Hub toward Sustainable Development


N. Odake (Nagoya Inst. of Tech., Japan)

T. Degawa (TECHNO INTEGRATION Co. Ltd, Japan)

W. Izumiya (Sangyo Times, Inc., Japan)

T. Koljonen (VTT Technical Research Centre of Finland, Finland)
S. Ohmori (YRP International Alliance Inst., Japan)
Y. Tai (Industrial Technology Research Institute, Taiwan)
M. Hori (Nagoya Univ., Japan)

18:30-20:00 Banquet (Student Cafeteria I, Chubu University)

Mar. 7 (Wed)
9:10- Registration
  Plasma Science 5
Emerging Plasma
Technology I
Chair:T. Kaneko
(Tohoku Univ.)
<Room A>
Nitride Semiconductors 5
Nano structure
Chair:A. Wakahara
(Toyohashi Univ. of Tech,
<Room B>
Nanomaterials 5
Functional NanoMaterials
Chair:E. Miura-Fujiwara
(Univ. Hyogo, Japan)
<Room C>


Invited Lecture
P. Favia (Univ. of Bari, Italy)
"Plasma processing of Materials for Life Sciences"


Invited Lecture
K. Kishino (Sophia Univ., Japan)
"InGaN-based Nanocolumn Emitters"


Invited Lecture
H. Yamaguchi Greenslet (Univ. of Florida, USA)
"New Magnetic Abrasives: Development and Precision Applications"

7a-A02OA (2330)
M. Shiratani (Kyushu Univ., Japan)
"A-Si:H Schottky Cells with Quite Low Light Induced Degradation Fabricated by Multihollow Discharge Plasma CVD"
7a-B02OB (2142)
J. Birch (Linkoping Univ., Sweden)
"Tailoring of AlInN Nanohelixes by Controlled Curvedlattice Epitaxial Growth"
7a-C02OC (2300)
D. Wei (National Taipei Univ. of Tech., Taiwan)
"Solvent effect on the synthesized characters of FePt monodispersive nanoparticles"
7a-A03OA (2398)
Y. Setsuhara (Osaka Univ., Japan)
"ICP-Assisted Sputtering with Inner-Type Low-Inductance Antenna for Low-Damage Reactive Deposion of Functional Films"
7a-B03OB (2078)
P. Shields (Univ. of Bath, UK)
"Fabricaton and properties of etched GaN nanorods"
7a-C03OC (2188)
M. Shima (Gifu Univ., Japan)
"CoPt Alloy Nanomagnets Crystalized on Carbon Microcoils"
10:40-11:00 Break
  Plasma Science 6
Emerging Plasma
Technology II
Chair:P. Favia
(Univ. of Bari, Italy)
<Room A>

Nitride Semiconductors 6
Electron Device II
Chair:T. Hashizume
(Hokkaido Univ., Japan)
<Room B>

Nanomaterials 6
Chair:K. Makihara
(Nagoya Univ., Japan)
<Room C>


Invited Lecture
T. Kaneko (Tohoku Univ., Japan)
"Biomedical applications of DNA-nanocarbon conjugates synthesized by gas-liquid interfacial plasmas"


Invited Lecture
J. Suda (Kyoto Univ.,Japan)
"Group-III nitride/silicon carbide heterostructures -- MBE growth and device applications"


Invited Lecture
X. Li (Peking Univ., China)
"Synthesis of nanostructured materials by hot and cold plasmas"

7a-A05OA (2161)
H. Hashizume (Meijo Univ., Japan)
"Effect of atomic oxygen on inactivation of spores of P.digitatum by low-temperature atmospheric-pressure plasma"
7a-B05OB (2219)
J. Jesudass (Nagoya Inst. of Tech., Japan)
"Investigation of trap states in in-situ MOCVD grown AlN/AlGaN/GaN MIS-HEMTs grown on Sapphire substrates"
7a-C05OC (2140)
C. Hsiao (Linkoping Univ., Sweden)
"Core-Shell AlInN Nanorod Arrays Grown by Magnetron Sputter Epitaxy"
7a-A06OA (2271)
O. Li (Nagoya Univ., Japan)
"By-Products Analysis for Degradation of Cellulose by Solution Plasma"
7a-B06OB (2113)
K. Takeshita (Tokyo Metropolitan Univ., Japan)
"Charge-State Dependent Annealing of Plasma- Induced Defects in n-GaN"
7a-C06OC (2208)
T. Suzuki (Nagoya Univ., Japan)
"Field Emission Properties of 10-nm Organic Nanopillars Fabricated by H2/N2 Mixture Gas Plasma Etching"
12:10-13:00 Lunch
13:00-14:30 Poster Session 3
Interdisciplinary 1
Advanced Nitride Devices
Chair:A.Khan (Univ. of South Carolina, USA)
<Room S>
14:30-15:05 Keynote Lecture
B. Daudin (CEA-Grenoble, France)
"GaN nanowires, GaN/AlGaN and InGaN/GaN nanowire heterostructures: growth, structural and optical properties"
15:05-15:35 Invited Lecture
T. Hashizume (Hokkaido Univ., Japan)
"GaN-based MOS structures processed with plasma-assisted dry etching"
15:35-16:05 Invited Lecture
Y. Saito, A. Yoshioka (Toshiba Corporation Semiconductor & Strage Products Company, Japan)
"GaN-HEMTs for Power Electronic Applications"
16:05-16:25 7p-S04OB (2199)
Q. Wang (The Univ. of Tokushima, Japan)
"Influence of Dry Recess Process on Enhancement-mode GaN MOSFET"
16:25-16:45 Break
Interdisciplinary 2
Plasma Science and Nitride Semiconductors
Chair:M. Yamaguchi (Nagoya Univ., Japan)
<Room S>

Panel Discussion
Application of Advanced Plasma Technology for Nitride Semiconductors III
-Importance and problem of plasma processing in nitride semiconductor devices-

H. Amano (Nagoya Univ., Japan)
T. Hashizume (Hokkaido Univ., Japan)
T. Kachi (Toyota Central R&D Labs., Inc., Japan)
A. Khan (Univ. of South Carolina, USA)
L. Selvaraj (Nagoya Inst. of Tech.,Japan)
Y. Nanishi (Ritsumeikan Univ., Japan/Seoul National Univ., Korea)
Y. Saito (Toshiba Corp. Semiconductor & Strage Products Company, Japan)
J. Suda (Kyoto Univ.,Japan)

Mar. 8 (Thu.)
9:10- Registration
Interdisciplinary 3
Plasma assisted growth
Chair:B. Daudin (CEA-Grenoble, France)
<Room S>
9:30-10:05 Keynote Lecture     
J. Speck (Univ. of California Santa Barbara, USA)
"Progress in the MBE Growth of GaN − Materials and Devices"
10:05-10:25 8a-S02OD (2432)
K. Wang (Ritsumeikan Univ., Japan)
"Free holes in Mg doped InN confirmed by thermopower experiments"
10:25-10:45 8a-S03OD (2362)
T. Ohachi (Doshisha University)
“Self-ionization of nitrogen atoms from negatively baiased electrode for monitoreing nitrogen atom flux to use PA-MBE”
10:45-11:00 Break
Interdisciplinary 4
Advanced Carbon Materials
Chair: M. Hiramatsu (Meijo Univ., Japan)
<Room S>
11:00-11:35 Keynote Lecture
M. Meyyappan (NASA Ames Research Center, USA)
"Plasma Nanotechnology: Past, Present, and the Future"
11:35-12:05 Invited Lecture  
M. Hasegawa (AIST, Japan)
"Low-temperature and large-area graphene synthesis by using microwave plasma CVD"
12:05-12:25 8a-S06OD (2139)
T. Hagino (Nagoya Univ., Japan)
"Effect of electrode materials on Synthesis of nano-graphene by alcohol in-liquid plasma"
12:25-13:30 Lunch
Late News
Chair: M. Sekine (Nagoya Univ., Japan)
<Room S>

8p-S01OLNA (3009)
"Measurement of heat fluxes to silicon wafer in plasma etching using low-coherence interferometry"

8p-S02OLNB (3024)
A. Jesudas (Nanyang Technological Univ., Singapore)
"Trapping Analysis by Pulsed Current-Voltage Characteristics for AlGaN/GaN HEMTs on 4-inch Si (111)"

8p-S03OLNC (3008)
J. Yang (Chang Gung Univ., Taiwan)
"Preparation and characterization of nano Pt-modified graphene fuel cell catalyst for methanol oxidation in alkaline solutions"

Green Innovation 1
Chair:Meyyappan(NASA Ames Research Center, USA)
<Room S>
Latest Program Download
14:00-14:35 Keynote Lecture 
R. Nemanich (Arizona State Univ., USA)
"Energy Conversion based on Thermionic and Photo-Electron Emission using Low Work Function Doped Diamond Films"
14:35-15:05 Invited Lecture  
A. Yoshikawa (Chiba Univ., Japan)
"Proposal of SMART III-Nitride Tandem Solar Cells with Using InN/GaN Magic Number Digital Alloys "
15:05-15:35 Invited Lecture  
V. Svrcek (AIST, Japan)
"Microplasma Induced Surface Engineering of Silicon Nanocrystals in Liquid Medium"
15:35-16:05 Invited Lecture  
T. Nozaki (Tokyo Inst. of Tech., Japan)
"Room Temperature Methane Conversion for Green Technology: Direct Synthesis of Methane to Methanol"
16:05-16:25 Break
Green Innovation 2
Chair:T. Inomata (Nagoya Inst. of Tech., Japan)
<Room S>
Latest Program Download

Panel Discussion
Advanced Plasma Nanotechnology towards Green Innovation

T. Nozaki (Tokyo Inst. of Tech., Japan)
M. Kambara (The Univ. of Tokyo, Japan)
M. Meyyappan (NASA Ames Research Center, USA)
R. Nemanich (Arizona State Univ., USA)
V. Svrcek (AIST, Japan)

17:45-18:05 Award
18:05-18:15 Closing