PLASMA SCIENCE
R. P. Brinkmann (Ruhr-University Bochum, GERMANY)
R. Bruce (IBM T. J. Watson Research Center, USA)
P. Favia (University of Bari, ITALY)
M. Goeckner (University of Texas at Dallas, USA)
A. Ito (National Institute for Fusion Science, JAPAN)
T. Kaneko (Tohoku University, JAPAN)
H. Shea (EPFL, SWITZERLAND)
NITRIDE SEMICONDUCTORS
K. Chen (The Hong Kong University of Science and Technology, CHINA)
T. Hashimoto (SixPoint Materials, Inc., USA)
K. Kishino (Sophia University, JAPAN)
J. Suda (Kyoto University, JAPAN)
NANOMATERIALS
Y. Awano (Keio University, JAPAN)
H. Yamaguchi Greenslet (University of Florida, USA)
S. Inagaki (Toyota Central R&D Labs., Inc., JAPAN)
X. Li (Peking University, CHINA)
P. Mayrhofer (Montanuniversitaet Leoben, AUSTRIA)
H. Nishihara (Tohoku University, JAPAN)
ADVANCED NITRIDE DEVICES Focused Session
T. Hashizume (Hokkaido University, JAPAN)
Y. Saito (Toshiba Corporation Semiconductor & Storage Products Company, JAPAN)
ADVANCED CARBON MATERIALS Focused Session
M. Hasegawa (AIST, JAPAN)
GREEN INNOVATION Focused Session
T. Nozaki (Tokyo Institute of Technology, JAPAN)
V. Svrcek (AIST, JAPAN)
A. Yoshikawa (Chiba University, JAPAN)
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