Wide Bandgap Semiconductors

Åsa Haglund (Chalmers University of Technology, SWEDEN)
"T.B.A."

Tatsushi Hamaguchi（Kyushu University, JAPAN)
"T.B.A."

Masahiro Hotta（Nagoya University, JAPAN)
"T.B.A."

Siddharth Rajan (Ohio State University, USA)
"Next-Generation Ultra-wide Bandgap Semiconductor Electronics"

Byeongchan So（Fraunhofer IAF, GERMANY)
"MOCVD Growth of III-Nitride Using New Precursors: Beyond Conventional HEMT"

Tomasz Sochacki (Unipress, POLAND)
"T.B.A."