Invited Speakers (Wide Band Gap Semiconductors)

Wide Band Gap Semiconductors

Shugo Nitta (Mie University, Japan)
"TBA"

Hideo Aida (Nagaoka University of Technology, Japan)
"TBA"

Masashi Kato (Nagoya Institute of Technology, Japan)
"Defect Engineering in SiC: How to Keep Power Device Performance and Reliability"

Hisashi Murakami (Tokyo University of Agriculture and Technology, Japan)
"TBA”

Takahiro Kawamura (Mie University, Japan)
"First-Principles Study of the Electronic Structure of Ga2O3: Effects of Lattice Strain and Point Defects"

Tomohiro Yamaguchi (Kogakuin University, Japan)
"TBA"

Juan Paolo Soria Bermundo (Nara Institute of Science and Technology, Japan)
"Plasma-Driven Strategies for Next-Generation Sustainable Oxide Electronics"

Takayoshi Oshima (National Institute for Materials Science (NIMS), Japan)
"Crystallographic Anisotropic Etching of β-Ga2O3."

Makoto Miyoshi (Nagoya Institute of Technology, Japan)
"Structual and Energy-Band Engineering of Quaternary AlGaInN Alloys and Their Application to Heterostructure Electronic Devices"