Wide Bandgap Semiconductors

Shugo Nitta (Mie University, Japan)
"Gas-Phase Reaction Analysis in Nitride Semiconductor MOVPE"

Hideo Aida (Nagaoka University of Technology, Japan)
"TBA"

Masashi Kato (Nagoya Institute of Technology, Japan)
"Optical Characterization and Process Development of SiC to Be High-Performance Power Devices"

Hisashi Murakami (Tokyo University of Agriculture and Technology, Japan)
"TBA”

Takahiro Kawamura (Mie University, Japan)
"First-Principles Study of the Electronic Structure of Ga2O3: Effects of Lattice Strain and Point Defects"

Tomohiro Yamaguchi (Kogakuin University, Japan)
"TBA"

Juan Paolo Soria Bermundo (Nara Institute of Science and Technology, Japan)
"Plasma-Driven Strategies for Next-Generation Sustainable Oxide Electronics"

Takayoshi Oshima (National Institute for Materials Science (NIMS), Japan)
"Crystallographic Anisotropic Etching of β-Ga2O3."

Makoto Miyoshi (Nagoya Institute of Technology, Japan)
"Structual and Energy-Band Engineering of Quaternary AlGaInN Alloys and Their Application to Heterostructure Electronic Devices"

Ray-Hua Horng (National Yang Ming Chiao Tung University, Taiwan)
"Development of E-mode GaN HEMT by Ferroelectric Materials"

Jong Kyu Kim (POSTECH, South Korea)
"TBA"

Man Hoi Wong (The Hong Kong University of Science and Technology, Hong Kong)
"TBA"

Tien-Chang Lu (National Yang Ming Chiao Tung University, Taiwan)
"Manipulating Photonic Crystal Effect in III-V and Nitride Coherent Light Emitters"

Dong-Sing Wuu (National Chi Nan University, Taiwan)
"Recent Progress in Growth of ε-Ga₂O₃ Thin Films and Device Applications"