Best Presentation Award (Oral)

Plasma Science

Keiichiro Urabe, Hitoshi Muneoka, Sven Stauss and Kazuo Terashima
*The University of Tokyo, Japan
“Production and Relaxation Processes of Metastable Helium Atoms in Cryoplasmas between 5 K and Room Temperature”

Nitride Semiconductors

Chia-Hung Lin, Tetsuya Akasaka and Hideki Yamamoto
*NTT Basic Research Laboratories, Japan
“N-face GaN (0001) Films Grown by Group-III Source Flow-rate Modulation Epitaxy”

Nanomaterials

Yong-Cin Chen and Meng-Jiy Wang
*National Taiwan University of Science and Technology, Taiwan
“Preparation of Nano-cubic Cu₂O/Platinum Core-Shelled Nanoparticles for the Electrochemical Applications”

Best Poster Presentation Award (Poster)

Plasma Science

Kazuki Egashira and Hirotaka Toyoda
*Nagoya University, Japan
“Influence of Discharge-off Duration on the Plasma Density in an Atmospheric-Pressure Pulsed Microwave Discharge”

Nitride Semiconductors

Akihisa Terano, Tomonobu Tsuchiya, Kazuhiro Mochizuki, Shigehisa Tanaka and Tohru Nakamura
*Hitachi, LTD, Japan
*Hosei University, Japan
"GaN-based Multi-2DEG-Channel Diodes with Breakdown Voltage of Over 3 kV“

Nanomaterials

Hiroki Hayashi, Helena Oi Lun Li and Nagahiro Saito
*Nagoya University, Japan
“Development of the Graphite Structure of Solution Plasma Synthesized Carbon by Halogenated Benzene Derivatives”