Japanese

  MEXT (Ministry of Education, Culture, Sports, Science and Technology) Knowledge Cluster Initiative (The Second Stage)
~ Tokai Region Nanotechnology Manufacturing Cluster ~
ISPlasma 2010
  2nd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials
Poster
Third Circular

March 7-10, 2010
Meijo University, Nagoya, Japan
Organizing Committee Chairperson: Masaru Hori, Plasma Nanotechnology Research Center, Nagoya University
Vice-Chairperson: Hideki Masuda, Nagoya Institute of Technology
Hiroshi Amano, Meijo University
Keiji Nakamura, Chubu University
 
ISPlasma 2009
ISPlasma2011 Call for Papers
APEX






Program


Program

The revised based on actual program can be download.


3/7(Sun) | 3/8(Mon) | 3/9(Tue) | 3/10(Wed) | Poster Session A | Poster Session B

・3/7 (Sun)
(17:00-18:00) Registration
18:00-19:30 Welcome Party (Student Hall in Meijo University)

・3/8 (Mon)
(8:30-19:00) Registration
Opening/Plenary Lecture <ROOM A>
9:20-9:35 Opening
Y. Komatsu (Deputy Director-General, Ministry of Education, Culture, Sports, Science and Technology, Japan)
S. Kato (President, Tokai Region Knowledge Cluster Headquarters, Japan)
M. Hori (Professor, Nagoya University, Japan)
9:35-9:45 Opening Talk
Y. Ohtsuka (Aichi Science & Technology Foundation, Japan)
"Tokai Region Nanotechnology Manufacturing Cluster and its Expansion Program"
9:45-10:15 Plenary Lecture 8a-A01S
S. Iijima (Meijo University)
"Structural Characterization of Nano-Carbon Materials on the Atomic Resolution Basis"
10:15-10:35 Coffee Break
Knowledge Cluster Initiative (The Second Stage)
-Tokai Region Nanotechnology Manufacturing Cluster- <ROOM A>
10:35-11:00 Knowledge Cluster Lecture 8a-A02C
M. Hori (Nagoya University, Japan)
"Fundamental Research on Plasma Nanoprocessing"
11:00-11:15 Knowledge Cluster Lecture 8a-A03C
H. Amano (Meijo University, Japan)
"Research on the Nitride-Based Light Emitters in Tokai Knowledge-Based Cluster"
11:15-11:30 Knowledge Cluster Lecture 8a-A04C
T. Egawa (Nagoya Institute of Technology, Japan)
"Growth and Device Applications of GaN on Si"
11:30-11:45 Knowledge Cluster Lecture 8a-A05C
O. Takai (Nagoya University, Japan)
"Progress in Solution Plasma Processing"
11:45-12:00 Knowledge Cluster Lecture 8a-A06C
Y. Watanabe (Nagoya Institute of Technology, Japan)
"Improvement of Machining Technologies for CFRP and Difficult –to-Machine Materials in the Transportation Industries"
12:00-13:00 Lunch
13:00-14:30 Poster Session A <Odd Numbers>
  Plasma 1.
Advanced Plasma Measuring Technology
<ROOM A>
Nitride 1.
Nitride Electronic Devices
<ROOM B>
Nanomaterials 1.
Nanocarbon Materials I
<ROOM C>
(14:30-15:00)
Keynote Lecture
8p-A01KA
U. Czarnetzki
(Ruhr University, Bochum, GERMANY)
"The Optical Probe: A Novel Device for Spatially Resolved Optical Emission Spectroscopy in Plasmas"
(14:30-14:50)
Invited Lecture
8p-B01IB 
S. Arulkumaran
(Nanyang Technological University, SINGAPORE)
"High performance AlGaN/AlN/GaN High-Electron-Mobility Transistors on Silicon Substrate"
(14:30-15:00)
Keynote Lecture
8p-C01KC
J. Robertson
(Cambridge University, UK)
"Plasma Deposition of Amorphous Diamond-like Carbon Films"
(15:00-15:20)
8p-A02OA
K. Urabe
(Kyoto University)
"Spatial Distribution of Electron Density in a Parallel-plate Dielectric Barrier Discharge Measured by CO2-laser Heterodyne Interferometry"
(14:50-15:10)
Invited Lecture
8p-B02IB
T. Hashizume
(Hokkaido University)
"Effects of plasma processing on surface properties of GaN and AlGaN"
(15:00-15:20)
Topical Lecture
8p-C02TC
H. Ohara
(Nippon ITF Inc.)
"Industrial Applications of DLC and Their Scientific Aspects"
(15:20-15:40)
8p-A03OA
C. Koshimizu
(TOKYO ELECTRON AT LTD.)
"Temperature measurement of silicon wafer in plasma etching process using low-coherence interferometry"
(15:10-15:30)
8p-B03OB
S. Nakamura
(Tokyo Metropolitan University)
"Electrical and Optical Characterization of Plasma-Induced Defects in n-type GaN Exposed to Plasma"
(15:20-15:40)
Topical Lecture
8p-C03TC M. Hasegawa (National Institute of Advanced Industrial Science and Technology)
"Low Temperature Nano-crystalline Diamond Film Synthesis using Surface Wave Plasma Chemical Vapor Deposition"
(15:40-16:00)
8p-A04OA
Q. Zhang
(Chubu University)
"Plasma Electron Monitoring with Multi-Resonator Frequency Shift Probe"
(15:30-15:50)
8p-B04OB
S. L. Selvaraj
(Nagoya Institute of Technology)
"Improved Breakdown by Suppressing Gate Leakage using 2 nm i-GaN cap layered AlGaN/GaN HEMTs on Silicon"
(15:40-16:00)
Topical Lecture
8p-C04TC
H. Yamada
(AIST)
"A Description of Reactive Microwave-Plasma-CVD of Single-Crystal-Diamond"
(16:00-16:20)
Coffee Break
(15:50-16:20)
Coffee Break
(16:00-16:20)
Coffee Break
Plasma 2.
Simulation
<ROOM A>
Nitride 2.
Growth of GaN and
Related Materials
<ROOM B>
Nanomaterials 2.
Nanocarbon Materials II
<ROOM C>
(16:20-16:50)
Keynote Lecture
8p-A05KA
M. J. Kushner
(University of Michigan, USA)
"Customizing Plasma Sources for Advanced Materials Synthesis"
(16:20-16:50)
Keynote Lecture
8p-B05KB
T. Fukuda
(Tohoku University)
"Prospects for the Acidic Ammonothermal Growth of GaN Crystal"
(16:20-16:50)
Keynote Lecture
8p-C05KC
Y. Wu
(National University of Singapore, SINGAPORE)
"Growth of Two-dimensional Carbon Nanostructures and Their Electrical
Transport Properties"
(16:50-17:10)
8p-A06OA
A. Ito
(National Institute for Fusion Science)
"Molecular Dynamics Simulation of Chemical Sputtering and Chemical Vapor Deposition on Carbon Materials"
(16:50-17:10)
8p-B06OB
H. Y. Geng
(FURUKAWA CO., LTD) 
"Residual Strain Evaluation by Cross-sectional Micro-reflectance Spectroscopy of Freestanding GaN Grown by HVPE"
(16:50-17:10)
Invited Lecture
8p-C06IC
T. Nozaki
(Tokyo Institute of Technology)
"A Pressure-induced Transition of Carbon Nanotube Morphology in Plasma
Enhanced Chemical Vapor Deposition"
(17:10-17:30)
8p-A07OA
H. Kousaka
(Nagoya University) "Numerical Simulation of High-density Plasma Column Sustained in Narrow Metal Tube with Microwave Propagation Slong Plasma-sheath Interface"
(17:10-17:30)
8p-B07OB
D. Iida
(Meijo University)
"Growth of GaInN Films by Raised Pressure MOVPE System at
200kPa"
(17:10-17:30)
8p-C07OC
T. Suzuki
(Meijo University)
"Application of Carbon Nanotubes to Nylon Composite"
17:30-19:00 Poster Session A <Even Numbers>

・3/9 (Tue)
(9:00-18:00) Registration
  Plasma 3.
Etching Process I
<ROOM A>
Nitride 3.
RF-MBE I
<ROOM B>
Nanocarbonmaterials 3.
Solar Cells Based on Organic Materials
<ROOM C>
(9:20-9:50)
Keynote Lecture
9a-A01KA        
M. Goeckner
(University of Texas at Dallas, USA)
"Energy Considerations in Plasma-surface Interactions"
(9:20-9:50)
Keynote Lecture
9a-B01KB
Y. Cordier
(CRHEA-CNRS, FRANCE)
"Comparison of GaN Based Structures Grown by Molecular Beam Epitaxy using Nitrogen Plasma and Ammonia Sources"
(9:20-9:50)
Keynote Lecture
9a-C01KC
S. Fukuzumi
(Osaka University)
"Nanomaterials for Artificial Photosynthesis"
(9:50-10:10)
9a-A02OA
S. Barnola
(CEA-LETI-MINATEC)
"Challenges in Plasma Etching of Narrow 3D Gate All Around Devices "
(9:50-10:10)
9a-B02OB 
T. Ohachi
(Doshisha University)
"RF Nitrogen Source for MBE Growth of
Group III Nitrides on Si and its Application for AM-MEE"
(9:50-10:10)
Invited Lecture
9a-C02IC   
T. Yoshida
(Gifu University)
"Electrochemical Self-Assembly of Nanostructured ZnO/Dye Hybrid Thin Films for Solar Cells"
(10:10-10:30)
9a-A03OA
S.-W. Cho
(Korea AJOU University)
"Effect of CH2F2 Addition on the Angular Dependence of Si3N4 Etch Rates And SiO2-to-Si3N4 Etch Selectivity in a C4F6/Ar/O2 Plasma "
(10:10-10:30)
9a-B03OB
S. Chen
(Nagoya University)
"Radical Kinetics in N2-H2 Plasma Generated by Novel High Density Radical Source"
(10:10-10:30)
9a-C03OC
S. Adhikari
(Chubu University)
"Both Single Walled and Multi Walled Carbon Nanotubes Incorporated Organic Solar Cells "
10:30-10:50 Coffee Break
  Plasma 4.
Etching Process II
<ROOM A>
Nitride 4.
RF-MBE II
<ROOM B>
Nanomaterials 4.
Surface Modification/
Surface Functionalization
<ROOM C>
(10:50-11:20)
Keynote Lecture
9a-A04KA
J. P. Chang
(UC Los Angeles, USA)  
"Multifunctional Oxide Materials: Synthesis and Patterning"
(10:50-11:20)
Keynote Lecture
9a-B04KB
B. Daudin
(CEA Grenoble, FRANCE)
"Growth, Structural and Optical Properties of GaN/AlN Nanowire Heterostructures"
(10:50-11:20)
Keynote Lecture
9a-C04KC
J. Patscheider
( EMPA, SWITZERLAND)
"Hard and Optically Transparent Al-Si-N Thin films:
Solid Solutions, Nanocomposites and Nanomultilayers"
(11:20-11:40)
9a-A05OA
T. Kachi
(Toyota Central R&D Labs., Inc.)
"Suppression of Leakage Current Through the pn Junction Fabricated on Etched Surfaces of GaN"
(11:20-11:40)
9a-B05OB
H. Umeda
(Ritsumeikan University)
"Fabrication of InN/InGaN Multi Quantum Well Structures by Droplet Elimination by Radical-beam Irradiation"
(11:20-11:40)
Invited Lecture
9a-C05IC
M. Kogoma
( Sophia University)
"Mulch Layer Deposition of Silica Films on Polycarbonate by Combining Atmospheric Pressure Glow Plasma and Sol-gel Method"
(11:40-12:00)
9a-A06OA
C. S. Moon
(Nagoya University)
"A Well-Established Compact Combinatorial Etching Process Empolying Inductively Coupled H2/N2 Plasma "
(11:40-12:00)
9a-B06OB
J. L. Guyaux
(RIBER SA)
"Current and Future's Development of Thin Film Technology"
(11:40-12:00)
9a-C06OC
J. Musil
(University of West Bohemia) "Hard Nanocomposite Coatings: Mechanical and Tribological Properties, Thermal Stability and Protection against Oxidation above 1000℃"
12:00-13:00 Lunch
13:00-14:30 Poster Session B <Odd Numbers>
Nitride 5. Advanced Nitride Devices <ROOM A>
14:30-15:00 Keynote Lecture 9p-A01KB 
S. Noda (Kyoto University)
"Photonic Crystals and Their Application to GaN System"
15:00-15:30 Keynote Lecture 9p-A02KB
N. Grandjean (EPFL, SWITZERLAND)
"Polariton Condensation Effects in GaN Microcavities"
15:30-16:00 Keynote Lecture 9p-A03KB 
A. Yoshikawa (Chiba University)
"Recent Advances in Plasma-assisted MBE of 1ML-InN/GaN-matrix Nanostructures for Novel Solar Cell and Light Emitters"
16:00-16:20 Invited Lecture 9p-A04IB
T. Uesugi (Toyota Central R&D Labs., Inc.)
"GaN Power Switching Devices for Automotive Applications"
16:20-16:40 Coffee Break
Nitride 6. Application of Advanced Plasma Technology for Nitride Semiconductors <ROOMA>
16:40-18:10 Panel Discussion
~Application of Advanced Plasma Technology for Nitride Semiconductors~
<Moderator>
Y. Nanishi (Ritsumeikan University)
<Panelists>
H. Amano (Meijo University, Japan)
B. Daudin (CEA Grenoble, France)
N. Grandjean (EPFL, Switzerland)
T. Hashizume (Hokkaido University, Japan)
H. Kano (NU Eco Engineering Co., LTD., Japan)
U. Mishra (UC Santa Barbara, USA)
T. Okumura (Tokyo Metropolitan University, Japan)
18:10-19:40 Banquet (Cafeteria in Meijo University)

・3/10 (Wed)
(9:00-17:00) Registration
  Plasma 5.
CVD Process
<ROOM A>
Nitride 7.
White LEDs
<ROOM B>
Nanomaterials 5.
Composite/Functionally
Grade Materials
<ROOM C>
(9:20-9:50)
Keynote Lecture
10a-A01KA
R. d'Aagostino
(University of Bari, ITALY)
"Plasma Nano-Structured
Fluorinated Polymers"
(9:20-9:50)
Keynote Lecture
10a-B01KB
K. Ota
(TOYODA GOSEI Co., Ltd.)
"History of GaN LEDs and
Their Progress"
(9:20-9:50)
Keynote Lecture
10a-C01KC         
L. A. Rocha
(University of Minho, PORTUGAL)
"Functionalization of Ti surfaces for Biomedical Applications"
(9:50-10:20) 
Keynote Lecture
10a-A02KA
U. R. Kortshagen
(University of Minnesota, USA) 
"Plasma-Synthesized
Silicon Nanocrystals for
Photovoltaics"
(9:50-10:10)
Invited Lecture
10a-B02IB
V. Haerle
(OSRAM, GERMANY)
Title to be assigned.
(9:50-10:10)
10a-C02OC
E. Miura-Fujiwara 
(Nagoya Institute of Technology)
"Fabrication of Metal-based Functionally Graded Grinding Wheel Dispersing Fine Ceramic Particles by a Centrifugal Mixed-powder Method"
(10:20-10:40)
Invited Lecture
10a-A03IA
T. Yoshida
(The University of Tokyo)
"Toward a Direct Production of
wafer-equivalent
Si films by
Mesoplasma CVD"
(10:10-10:30)
10a-B03OB
C.-C. Kao
(National Cheng Kung
University)
"Localized Surface Plasmon-Enhanced GaN-based Light-Emitting-Diode with Ag Nanotriangles array by Nanosphere Lithography"
(10:10-10:30)
10a-C03OC
M. Tokita
(Bits Company Limited)
"Development of Industrial Products on Functionally Graded Materials by Spark Plasma Sintering (SPS) Method"
(10:40-10:50)
Coffee Break
(10:30-10:50)
Coffee Break
(10:30-10:50)
Coffee Break
Plasma 6.
Solar Cells Based on Plasma Science
<ROOM A>
Nitride 8.
UV Devices
<ROOM B>
Nanomaterials 6.
Nanoparticles
<ROOM C>
(10:50-11:20)
Keynote Lecture
10a-A04KA
T. Takamoto
(SHARP CORPORATION)
"High Efficiency III-V
Multijunction Solar Cells"
(10:50-11:20)
Keynote Lecture
10a-B04KB
C. J. Sun 
(ITRI, TAIWAN) 
"UV-WLED for Wide Color
Gamut Display Application"
(10:50-11:20)
Keynote Lecture
10a-C04KC        
P. Milani
(The University of Milan, ITALY)
"Pulsed Microplasma Cluster Source: A Powerful Tool for the Integration of Nanomaterials on Microdevices"
(11:20-11:40)
10a-A05OA
M. Umeno
(Chubu University)
"Synthesis of Carbon Thin Film for Solar Cells
Application"
(11:20-11:40)
10a-B05OB
Y. Sakai
(Nagoya Institute of Technology)
"MOCVD Growth and
Characterization of AlInN-based
Schottky Ultraviolet Photodiodes on
AlN template"
(11:20-11:40)
10a-C05OC
K. Sumiyama
(Nagoya Institute of Technology)
"Fe-Si Core/Si Shell Clusters Prepared by Collisions of Fe and Si Clusters in a Plasma-Gas-Condensation System"
(11:40-12:00)
10a-A06OA
Y. Kawashima
(Kyushu University)
"Synthesis of Crystalline Si
Nanoparticles for Quantum
Dots Sensitized Solar
Cells"
(11:40-12:00)
10a-B06OB
F. Matsuno
(Toyohashi University of
Technology)
"Intelligent UV Sensor
Composed of GaN-based
Photodiode and Si-charge
Transfer Type Signal Prosessor"
(11:40-12:00)
10a-C06OC
H. Miyata
(Kyushu University)
"Control of Surface Roughness of Nano-particle Composite Lowk
Film Seposited in CVD Plasma"
12:00-13:00 Lunch
13:00-14:30 Poster Session B <Even Numbers>
Plasma 7. Advanced Plasma Applications and
Industry-Academia-Government Collaboration <ROOM A>
14:30-15:00 Keynote Lecture 10p-A01KA
T. Higashi (Tokyo Electron Limited)
"Global Competitive Strength by Core Technology"
Simultaneous Interpretation
15:00-15:30 Keynote Lecture 10p-A02KA
J. G. Han (CAPST, Sungkyunkwan University, KOREA)
"Synthesis of Functional Hybrid Films on Polymer by Dual RF Plasma CVD"
Simultaneous Interpretation
15:30-16:00 Keynote Lecture 10p-A03KA
E. Schultheiss (Fraunhofer Institute, GERMANY)
"Technology Transfer in Germany: the Fraunhofer Model"
Simultaneous Interpretation
16:00-16:30 Keynote Lecture 10p-A04KA
W. Izumiya (Sangyo Times, Inc.)
"Environmental Energy Technology is the Detonator of the Second Industrial Revolution."
Simultaneous Interpretation
16:30-16:50 Coffee Break
Plasma 8. Applicatioin Front of Advanced Plasma Science and
Industry-Academia-Government Collaboration <ROOM A>
16:50-18:20 Panel Discussion
~Application Front of Advanced Plasma Science and Industry-Academia-Government Collaboration~
<Moderator>
W. Izumiya (Sangyo Times, Inc.)
<Panelists>
M. Goeckner (University of Texas at Dallas, USA)
J. G. Han (CAPST, Sungkyunkwan University, Korea)
M. Hori (Nagoya University, Japan)
S. Hosaka (Tokyo Electron Limited, Japan)
M. Sato (MARUBUN CORPORATION, Japan)
E. Schultheiss (Fraunhofer Institute, Germany)
Simultaneous Interpretation
18:20-18:30 Closing

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