Professor Nicolas Grandjean
École polytechnique fédérale de Lausanne, SWITZERLAND
Professor Nicolas Grandjean has been researching GaN using the molecular beam epitaxy method for many years and has published over 600 papers and books to date, making a significant contribution to the field of III-nitride semiconductors. In particular, he has achieved outstanding results in the growth of GaN quantum dots at a low temperature of 800°C, white light emission from a three-color light-emitting layer using this, and elucidation of the growth mechanisms and electronic properties of GaN nanostructures through photoluminescence measurements. He also gave keynote speeches in 2010, 2011, and 2013, making a significant contribution to ISPlasma.
Honorary Emeritus Chair
Professor Jenq-Gong Duh
National Tsing Hua University, TAIWAN
He received Ph.D. in Material Engineering from Purdue University in 1983. He has joined the Department of Material Science and Engineering at NTHU since and promoted to distinguished professor, then chair professor, and is now emeritus professor. His research fields involve multifunctional coating and surface modification, fabrication of cathode and anode material for Li-battery, solder joint reliability in microelectronic packages, and the characterization of materials by electron microscopy. Special interest is focused on the employment of plasma technology in the exploration of multi-functional coating and advanced energy material development. He has published 496 SCI papers and given 492 oral presentations and posters at international conferences. He was recognized, in 2021 and 2022 as one of the World’s Top 2% Scientists. Recently, he was honored with the Lifetime Achievement Award at the 2023 TACT International Thin Films Conference and 2024 Lam Research and Development Paper Guidance Award. Currently, he is the editor-in-chief for the Elsevier “Materials Chemistry and Physics.”
Associate Professor Atsushi Kobayashi Tokyo University of Science, JAPAN
He has been working on pulsed sputter deposition(PSD) of nitride materials for nearly 20 years at Prof. Fujioka lab. at Tokyo University. PSD uses pulsed sputtering of metallic materials in combination with a high-density nitrogen plasma. He has been working on the polarity control of GaN with both polar and non-polar face, low temperature growth of high indium content InGaN for red LED, superconducting NbN for qubit of Quantum computing, and recently high dielectric constant ScAlN film for high frequency electron device application for 6G or beyond.
PSD is very promising technology for very high doping non-alloy ohmic contact as well. PSD is potentially superior to other epitaxial growth technology in terms of regrowth to fabricate a device structure. Usually, regrowth process is used at nearly final stage of device process. While the other epitaxial growth technology like MOVPE requires a massive utility, sputtering is very popular to any device manufacturers. Therefore, PSD would be accepted easily to device process.
Prof. Kobayashi has also been contributed to ISPLasma by giving an invited talk at ISPlasma 2021.
04pA14O
Takumi Kurushima, T. Tsutsumi, M. Sekine, M. Hori, K. Ishikawa
Effect of Sticking Probability on Radical Transports in High-Aspect-Ratio Holes
Nagoya University
05pA13O
Pierre Mathieu1, A. Chatterjee2, R. Snders3, N. Britun4
Optical Spectroscopy for a Better Understanding of Plasma-Based CH4 Reforming in Atmospheric Discharges
1FNRS-UMONS, 2UMONS, 3UMONS-Material Nova, 4Nagoya University
05aB05O
Seira Morimune-Moriya, Y. Iwamura, D. Ogawa, K. Nakamura
Effect Plasma treatment of carbon nanotubes on structure and properties of polyimide nanocomposite
Chubu University
05aD02O
Hiroyuki Matsuyama, S. Ikehara, E. Yamamoto, S. Akita, A. Kazuhiko, S. Ohki, Y. Ikehara
Analysis of the Spatial Transcriptome Revealed that Different Types of Cells and Molecular Activities Were Present in Tissues Treated with Plasma Hemostatic Equipment and a High-Frequency Electric Coagulator
Chiba University
04P-04
Yoshiyuki Hasegawa, T. Ueda, K. Terada, D. Fujikake, R. Murase, R. Yamazaki, G. Uchida
Nanostructured Sn and SnO2 Anode Films Deposited by Plasma Sputtering and their Application to Li-ion Batteries
Meijo University
04P-09
Yuan-Kai Li, Y. Shen, T. Wei
Preparation of Hydrophobic and Oleophobic Fluorocarbon Thin Film by Mixed Gas Microwave Plasma
Chung Yuan Christian University
04P-32
Eunsu Lee, Y. Han, D. Hong, M. Jeon, H. Chae
High Aspect Ratio Etching of SiO2 at Low-Temperature using Low-Global Warming C3H2F6
Sungkyunkwan University
04P-35
Thi-Thuy-Nga Nguyen1, K. Shinoda2, S. Hsiao1, K. Maeda2, K. Yokogawa2, M. Izawa2, K. Ishikawa1, M. Hori1
Low-Damage Plasma Etching of Metal Gate TiAlC Using Nonhalogen Chemistries at Room Temperature
1Nagoya University and 2Hitachi High-Tech Corp.
05P-11
Yuta Kinashi1, N. Ezumi1, T. Seto1, R. Miyauchi1, H. Bhattarai1, T. Yamazaki1, M. Hirata1, J. Kohagura1, S. Togo1, M. Sakamoto1, N. Ohno2
Initial Experimental Results of a Hybrid Plasma Source using Hot Cathode Arc Discharge and Helicon Wave Discharge
1University of Tsukuba and 2Nagoya University
05P-21
Jan Kuhfeld and Koichi Sasaki
Measurements and Modeling of N2(A,v) in a Nanosecond Pulsed Glow Discharge at Sub-Atmospheric Pressure
Hokkaido University
05P-47
Takahiro Gotow1, T. Sonoda1, T. Takahashi1, H. Yamada1,2, T. Ide1, R. Azumi1, M. Shimizu1, Y. Tsunooka2, S. Seki2, K. Kutsukake2,T. Ujihara1,2
Modeling of Undoped GaN Using a 2D MOCVD Simulator
1National Institute of Advanced Industrial Science and Technology and 2Nagoya University
05P-78
Chia-Hung Lin and Wei-Hung Chiang
Plasma-Engineered Metal-Organic Single-Atom Nanocatalysts with Extreme Catalytic Reduction
National Taiwan University of Science and Technology
04P-81
Kihiro Fukuda, R. Ueshima, K. Omura, Y. Ikeda, M. Jinno
Molecular Introduction into Plant Callus Cells by Multiple Plasma Treatments
Ehime University
04P-84
Daiji Kitagawa1, T. Watanabe1, M. Shimizu1, M. Kato1, K. Ishikawa2, H. Tanaka2, M. Hori2, M. Ito1
Irradiation Time Dependence of Bactericidal Effect of Oxygen Radical-Activated Indole Solution
1Meijo University and 2Nagoya University
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