Invited Speakers (Nitride Semiconductors)

Nitride Semiconductors

Daisuke Iida (King Abdullah University of Science and Technology (KAUST), SAUDI ARABIA)
"Efficient InGaN-Based Red LEDs and their Micro-LEDs"

Takuya Maeda (The University of Tokyo, JAPAN)
"ScAlN as a Material to Boost Next-Generation High-Frequency GaN-Based FETs"

Maciej F. Matys (Nagoya University, JAPAN)
"Design and Fabrication of Vertical GaN Junction Barrier Schottky Diodes Using Selective Ion Implantation Technology"

Kentaro Nagamatsu (Tokushima University, JAPAN)
"High-Temperature Growth in AlN by MOVPE"

Takuma Nanjo (Mitsubishi Electric Corporation, JAPAN)
"Demonstration of E-mode Operation in EID AlGaN/GaN MOS-HEMT"

Takeyoshi Onuma (Kogakuin University, JAPAN)
"Sub-200 nm Far-UV Emission Characteristics in Rocksalt-Structured MgZnO Epitaxial Films"

Naoteru Shigekawa (Osaka Metropolitan University, JAPAN)
"Direct Wafer Bonding of Nitride and its Application for Advanced Devices"

Masatomo Sumiya (National Institute of Materials Science (NIMS), JAPAN)
"Characterization of Wide Gap Semiconductors by Photothermal Deflection Spectroscopy"

Atsushi Tanaka (Nagoya University, JAPAN)
"Laser Slicing of GaN Substrates and GaN Devices"