Invited Speakers (Nitride Semiconductors)

Nitride Semiconductors

Jared Kearns (Sony, Japan)
"Mode Control of Long-Cavity Blue and Green VCSELs"

Hiroshi Fujioka (The University of Tokyo, Japan)
"Characteristics and Applications of GaN Films Prepared by Low Temperature Plasma Process"

Satoshi Kamiyama (Meijo University, Japan)
"Crystal Growth and Fabrication of GaN-Based Multi-Quantum Shell (Mqs)/Nanowire Lasers"

Ryo Tanaka (FUJI ELECTRIC CO., LTD., Japan)
"Recent Development and Future Prospects of Vertical GaN Power Devices"

Henryk Turki (Institute of High Pressure Physics of the Polish Academy of Science "Unipress", Poland)
"Buried Tunnel Junction for Inverted Current Flow in IBiplab SarkarII-Nitride Structures"

Kengo Nagata (Nagoya University and Toyoda Gosei Co., Ltd., Japan)
"Development of High-Efficiency Algan Tunnel Junction Deep-UV Leds"

Subramaniam Arulkumaran (Nanyang Technological University, Singapore)
"High Breakdown Vertical GaN-on-GaN Schottky Diodes for α-Particle Detection"

Kazuki Ohnishi (Nagoya University, Japan)
"Halide Vapor Phase Epitaxy of P-Type GaN for Vertical GaN Power Devices"

Biplab Sarkar (Indian Institute of Technology, Roorkee, Uttarakhand, India)
"Small Signal Model for High Frequency Analysis of AlGaN/GaN MOS-HEMTs"

Masachika Toguchi (Hokkaido University, Japan)
"Fabrication of Recessed-gate AlGaN/GaN HEMTs by Low-Damge Contactless Photo-Electrochemical Etching"

Masako Kodera (Moses Lake Industries, Inc., U.S.A)
"Impact of Plasma-Damaged-Layer Removal and Atomic-Sized Defect Visualization on GaN HEMT Devices"

Ryuji Katayama (Osaka University, Japan)
"Deep UV using SHG"

Jung Han (Yale University, U.S.A)
"Porous GaN and its Applications"