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MEXT (Ministry of Education, Culture,
Sports, Science and Technology) Knowledge Cluster Initiative (The Second Stage)
~ Tokai Region Nanotechnology Manufacturing Cluster ~ |
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2nd International Symposium
on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials |
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March
7-10, 2010
Meijo University, Nagoya, Japan
Organizing Committee Chairperson: |
Masaru
Hori, Plasma Nanotechnology Research Center, Nagoya University |
Vice-Chairperson: |
Hideki Masuda,
Nagoya Institute of Technology
Hiroshi Amano, Meijo University
Keiji Nakamura, Chubu University |
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Symposium Scope
The ISPlasma2010 will be held as part of the Expansion Program
of the Second Stage Knowledge Cluster Initiative (Tokai Region Nanotechnology
Manufacturing Cluster) to establish an Advanced Plasma Nanotechnology Science
Research Foundation in the Tokai region. The symposium is focused on at advanced
plasma science and technology and its applications for Nitrides and Nanomaterials. |
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Related Field
◆Plasma Science and Technology
(Plasma Measuring Technology/Simulation and Database/Etching Process/CVD Process/
Solar Cells/Flexible Electronics/Plasma Applications)
◆Nitride Semiconductors
(Crystal Growth/MBE Growth/Plasma Processing/Electronic Devices/White LEDs/UV LEDs)
◆Nanomaterials
(Nanocarbon Materials/Solar Cells/Surface Modification/Surface Functionalization/
Composite Materials/Functionally Grade Materials/Nanoparticles)
◆Integration Technology of Plasma Science, Nitride Semiconductors and Nanomaterials
◆Industry-Academia-Government Collaboration |
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Plenary Speakers <Tentative>
S. Iijima (Meijo University, JAPAN) |
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Keynote/Invited/Knowledge Cluster Speakers <Tentative>
- Plasma Science
- J. P. Chang (UCLA, USA)
U. Czarnetzki (Ruhr University, Bochum, GERMANY)
R. d'Agostino (University or Bari, ITALY)
M. Goeckner (University of Texas at
Dallas, USA)
J. G. Han (CAPST, Sungkyunkwan University, KOREA)
M. Hori (Nagoya University, JAPAN)
U. Kortshagen(University of Minnesota, USA)
M. Kushner (University of Michigan, USA)
O. Takai (Nagoya
University, JAPAN)
T. Takamoto (SHARP CORPORATION, JAPAN)
T. Yoshida (The University of Tokyo, JAPAN)
- Nitride Semiconductors
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H. Amano (Meijo University, JAPAN)
Y. Cordier (CNRS-CRHEA, FRANCE)
S.
Arulkumaran (Nanyang Technological University, SINGAPORE)
B. Daudin (CEA Grenoble,
FRANCE)
T. Egawa (Nagoya Institute of Technology,
JAPAN)
T. Fukuda (Tohoku University, JAPAN)
N. Grandjean (EPFL, SWITZERLAND)
V. Haerle (OSRAM GmbH, GERMANY)
T. Hashizume (Hokkaido University, JAPAN)
U. K. Mishra (UCSB, USA)
S. Noda (Kyoto
University, JAPAN)
K. Ota (TOYODA GOSEI Co., Ltd., JAPAN)
C. J. Sun (ITRI, TAIWAN)
T. Uesugi (Toyota Central R&D Labs., Inc., JAPAN)
- Nanomaterials
- S. Fukuzumi (Osaka University, JAPAN)
M. Kogoma (Sophia University, JAPAN)
P. Milani (The University of Milan, ITALY)
T. Nozaki (Tokyo Institute of Technology, JAPAN)
J. Patscheider (EMPA, SWITZERLAND)
J. Robertson (Cambridge University, UK)
L. A. Rocha (University of Minho, PORTUGAL)
Y. Watanabe (Nagoya Institute of Technology, JAPAN)
Y. Wu (National University
of Singapore, SINGAPORE)
T. Yoshida (Gifu University, JAPAN)
- Industry-Academia-Government Collaboration
- T. Higashi (Tokyo Electron Limited, JAPAN)
W. Izumiya (Sangyo Times, Inc.,
JAPAN)
E. Schultheiss (Fraunhofer Institute, GERMANY)
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Paneldiscussion <Tentative>
- "Application of Advanced Plasma Technology for Nitride Semiconductors"
- Moderator
Y. Nanishi (Ritsumeikan University, JAPAN)
- Panelists
H. Amano (Meijo University, JAPAN)
B. Daudin (CEA Grenoble, FRANCE)
N. Grandjean (EPFL, SWITZERLAND)
T. Hashizume (Hokkaido University, JAPAN)
H. Kano (NU Eco Engineering Co., LTD., JAPAN)
U. K. Mishra (UC Santa Barbara, USA)
T. Okumura (Tokyo Metropolitan University, JAPAN)
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- "Application Front of Advanced Plasma Science and Industry-Academia-Government Collaboration"
- Moderator
W. Izumiya (Sangyo Times, Inc., JAPAN)
- Panelists
M. Goeckner (University of Texas at Dallas, USA)
J. G. Han (CAPST, Sungkyunkwan University, KOREA)
M. Hori (Nagoya University, JAPAN)
S. Hosaka (Tokyo Electron Limited, JAPAN)
M. Sato (MARUBUN CORPORATION, JAPAN)
E. Schultheiss (Fraunhofer Institute, GERMANY)
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