Award
ISPlasma2013 Organizing Committee is pleased to announce the winners of Best Presentation Award and Best Poster Presentation Award as follows:
Best Presentation Award (Oral)
Plasma Science
Hideaki Yamada*, Akiyoshi Chayahara, Yoshiaki Mokuno, Nobuteru Tsubouchi, and Shin-ichi Shikata
*AIST, Japan
“Uniformity of the growth of single-crystal diamond wafers over inch size area by using reactive microwave plasma CVD”
Nitride Semiconductors
Shiro Ozaki*, Toshihiro Ohki, Masahito Kanamura, Naoya Okamoto, and Toshihide Kikkawa
*Fujitsu Laboratories Ltd., Japan
“Effect of ALD method on threshold voltage shift in AlGaN/GaN MIS-HEMTs”
Nanomaterials
Bor-Jang Liaw*, You-Syuan Jhai, Wei-Hsuan Kuo, Wen Wang, and Meng-Jiy Wang
*Nation Taiwan University of Science and Technology, Taiwan
“Sythesis of high index facets nanoparticles for cholesterol sensing”
Best Poster Presentation Award (Poster)
Plasma Science
Tatsuru Shirafuji*, Kenji Takahashi, Hideo Kambayashi, and Tetsuo Goto
*Osaka City University, Japan
“Possibility of plasma generation and sterilization in water using An Er:YAG laser”
Nitride Semiconductors
Yohjiro Kawai*, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano, Hiroki Kondo, Mineo Hiramatsu,
Hiroyuki Kano, Koji Yamakawa, Shoji Den and Masaru Hori
*Nagoya University, Japan
"In-situ observation of emission peak transition from GaN to Al0.34Ga0.66N by introducing in-situ cathode
luminescence in plasma-assisted molecular beam epitaxy using high-density nitrogen radical source“
Nanomaterials
Hideaki Tsukamoto*, Yoshiki Komiya, Hisashi Sato, and Yoshimi Watanabe
*Nagoya Institute of Technology, Japan
“Thermal shock behaviour of ZrO2/Ti functionally graded materials fabricated by spark plasma sintering”