Invited Speakers (Nitride Semiconductors)

Nitride Semiconductors

Makoto Kasu　(Saga University, JAPAN)
"Diamond High Power and Voltage MOSFETs:Physics, Fabrication, Static and Dynalnic Characterization"

Masataka Imura (National Institute for Materials Science (NIMS), JAPAN)
"Development of Highly Tolerant Diamond Schottky Barrier Photodiodes for Deep-Ultraviolet Xenon Excimer Lamp and Protons Detection"

Yoshitaka Taniyasu (NTT Basic Research Laboratories, JAPAN)
"Recent Progress of AlN Based Ultra-Wide Bandgap Semiconductor Devices"

Ziyi Zhang (Asahi Kasei, JAPAN)
"AlGaN Based Laser Diode of UV-C Wavelength"

Hironori Okumura (University of Tsukuba, JAPAN)
"High-Temperature and High-Power Devices Using AIN"

Shinya Ohmagari (National Institute of Advanced Industrial Science and Technology, JAPAN)
"Recalibration-Free Single-Use Concept Diamond-Based Electronic Tongue: Fast, Single-Drop, Portable Fingerprinting Analysis"

Alessandro Floriduz (Swiss Federal Institute of Technology in Lausanne (EPFL), Switzerland, SWITZERLAND)
"Direct High-Temperature MOCVD Growth of High-Quality GaN on ScAlMgO4: A Ppathway for High Performance Devices"

Srabanti Chowdhury (Stanford University, U.S.A.)
"On Maximizing the Performance of Gallium Nitride Transistors"

Yongzhao Yao (Japan Fine Ceramics Center, JAPAN)
"Visualization of Structural Defects in Beta-Ga2O3 Using Synchrotron X-Ray Techniques for Power-Device Application"

Shuhei Ichikawa (Osaka University, JAPAN)
"Hybrid Integration of Eu-Doped GaN and InGaN LEDs towards Ultrahigh Definition Micro LED Display"