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MEXT (Ministry of Education, Culture, Sports, Science and Technology) Knowledge Cluster Initiative (The Second Stage)
～ Tokai Region Nanotechnology Manufacturing Cluster ～ |
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First International Symposium on |
| Advanced Plasma Science and its Applications |
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March 8-11, 2009
IB Building, Nagoya University, Nagoya, Japan
Organizing Committee Chairperson : Masaru Hori
Vice Director, Plasma Nanotechnology Research Center, Nagoya University |
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Program of the First International Symposium on Advanced Plasma Science and its Applications
・3/8(Sun)
| 18:00-19:30 |
Welcome Party at Hotel Castle Plaza |
・3/9(Mon)
| 9:00-9:10 |
Opening
Opening Address
M. Matsuo,
President of Aichi Science & Technology Foundation
Opening Remarks
M. Hori ,
Chairperson of the Organizing Committee |
| 9:10-9:30 |
The Second
Stage Knowledge Cluster Initiative
(Chair: S.
Noda) |
O. Takenaka
Aichi Science
& Technology Foundation (ASTF), Japan
Tokai Region Nanotechnology Manufacturing Cluster
Innovation of
Environment-Friendly High-Level Functional Materials and Devices Leading the
World |
| 9:30-10:10 |
M. Hori
Nagoya
University, Japan
Advanced Plasma Fundamental Nanotechnology |
| 10:10-10:30 |
Break |
| 10:30-11:00 |
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O. Takai
Nagoya
University, Japan
Development of Nanomaterials with Novel
Surface Function |
| 11:00-11:30 |
T. Egawa
Nagoya
Institute of Technology, Japan
High-efficient Optical, Power Materials and Devices |
| 11:30-12:00 |
Y. Watanabe
Nagoya
Institute of Technology, Japan
Development of Nanocomposites Based on Interface Engineering
-Collaboration
with Other Relevant Ministries- |
| 12:00-14:00 |
Lunch and Poster Session I |
| 14:00-14:30 |
Plasma (1)
Plasma Researches in Advanced Plasma Nanoprocessing Research
Affiliations (Chair: K. Nakamura) |
J.G. Han, Y.S.
Choi, A. Matilainen, and S.B. Jin
Sungkyunkwan
University, Korea
Low Temperature Synthesis of SiO2 on Polymer Substrate by PECVD |
| 14:30-15:00 |
U. Czarnetzki1,
B.G. Heil1, J. Schulze1, Z. Donko2, R.P.
Brinkmann1, and
Th.
Mussenbrock1
1Ruhr-University, Germany 2Hungarian Academy of
Science, Hungary
A Novel Technique for Independent Control of Ion Energy and Flux in CCPs |
| 15:00-15:30 |
M.J. Goeckner, C.T. Nelson, S.P. Sant, A.K. Jindal, E.
Joseph, B-S. Zhou,
G. Padron-Wells, B. Jarvis, C. Estrada, D.
Urrabazo, R. Pierce,
and L.J. Overzet
The University
of Texas at Dallas, U.S.A.
Plasma-surface Interactions |
| 15:30-15:40 |
Break |
| 15:40-16:10 |
Plasma (2)
Present Status and Perspectived in Advanced Plasma Nanomaterial Processing
(Chair: Y.
Watanabe) |
G. Cunge1,
E. Pargon1, O.
Joubert1, L. Vallier1, T. Chevolleau1, R.
Ramos1,
E. Sungauer1, M. Martin1,
O. Luere1, S. Barnola2, T. Morel2, and T.
Lill3 1CNRS, France 2CEA-LETI,
France 3Applied Materials, Sunnyvale, U.S.A.
Challenges and Future Prospects
in Plasma Etching |
| 16:10-16:40 |
J. Musil1,2 and P. Baroch1
1University of West Bohemia, Czech Republic 2Academy of
Sciences of the Czech Republic, Czech Republic
Advanced Sputtering Discharges for Thin Film Deposition |
| 16:40-17:10 |
S. Hosaka
Tokyo Electron
Ltd., Japan
Current R&D Status and Prospects of Si Semiconductor Plasma Processing
Equipment System |
| 17:30-19:00 |
Banquet
Restaurant Hananoki in Nagoya University |
・3/10(Tue)
| 9:00-9:20 |
Towards the
Development of Autonomic MBE Systems Based on Nitride Radical Sources and
Radical Monitoring
(Chair: K.
Hiramatsu) |
M. Hori
Nagoya
University, Japan
Application of Advanced Plasma Technology for the Development of Autonomic
MBE System |
| 9:20-9:45 |
B. Daudin
CEA-Grenoble,
INAC/SP2M, France
Growth of GaN Heterostructures by Plasma-assisted Molecular Beam Epitaxy |
| 9:45-10:10 |
Y. Nanishi and
T. Yamaguchi
Ritsumeikan
University, Japan
Proposal of New InN Growth Method by MBE and Usefulness of This Method as
Nitrogen Radical Beam Monitoring |
| 10:10-10:30 |
Break |
| 10:30-10:55 |
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A. Yoshikawa,
Y. Ishitani, N. Hashimoto, H. Saito, and S. Che
Chiba
University, Japan
Self-limiting Growth of -1ML-thick InN on Ga-polarity GaN by rf-plasma MBE |
| 10:55-11:20 |
J.Y. Duboz, F.
Semond, Y. Cordier, and J. Massies
CRHEA-CNRS,
France
MBE Epitaxy of GaN on Si |
| 11:20-11:45 |
K. Kishino1,2,3,
H. Sekiguchi1,3, and A. Kikuchi1,2,3 1Sophia
University, Japan 2Sophia Nanotechnology
Research Center, Japan 3CREST, Japan Science and
Technology Agency, Japan
Regularly Arranged InGaN-based Nanocolumns and their Emission Color Control
over Full Visible Range |
| 11:45-12:00 |
H. Amano
Meijo
University, Japan
Expectation for Nitride-based Nanostructure for Future Light Emitting Devices |
| 12:00-14:00 |
Lunch and Poster Session II |
| 14:00-14:30 |
Towards the
Advanced Plasma Nanotechnology Science and Research Foundation (with interpretation)
(Chair: M.
Sekine) |
J.C. Guibert
CEA, MINATEC,
France
MINATEC, A New Research Campus Concept for Nanoscience and Technology |
C.D. Dilks
Philadelphia
Science Center, U.S.A.
Technology-LED Economic Development
-Changing Tactics to Meet Desire Outcomes Science
Center in Philadelphia, Pennsylvania – A Case Study |
| M. Kume
PLACIA, Nagoya
Urban Industries Promotion Corporation, Japan
Activities of
Plasma Technology Transfer to Industries in PLACIA |
| 15:30-15:50 |
Break |
| 15:50-17:00 |
Panel
Discussion (with interpretation) |
～Technology
Transfer; Scheme and Management～
Moderator
O. Takenaka, ASTF
Panelists
M. Hori, Nagoya University, Japan
J.G. Han, Sungkyunkwan University, Korea
J.C. Guibert, MINATEＣ, France
C.D. Dilks,
Philadelphia Science Center, U.S.A.
M. Kume, PLACIA, Japan
K. Matsumoto,
TN EMC Ltd., Japan |
・3/11(Wed)
| 9:00-9:20 |
Plasma (3)
The Front of Radical Control Plasma Nanoprocessing Research
(Chair: H.
Toyoda)
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T. Hara, R.
Ichiki, and Y. Kubota
Toyota
Technological Institute, Japan
Modification of Metal Surface by Atomic Nitrogen |
| 9:20-9:40 |
M. Hiramatsu
Meijo
University, Japan
Carbon
Nanowall Fabrication by Radical-Controlled Plasma Processing: Toward the
Application for New Functional Devices |
| 9:40-10:00 |
M. Shiratani1,
S. Iwashita1, H. Miyata1, H. Matsuzaki1, K. Koga1, and M. Akiyama2 1Kyushu
University, Japan 2Advanced Industrial Science and Technology (AIST), Japan
Plasma Manipulation of Nano-blocks and its Application to ULK Film Deposition |
| 10:00-10:30 |
Break |
| 10:30-10:50 |
Plasma (4)
The Front of Flexible Electronics Researches
(Chair:
M. Hiramatsu) |
Y. Setsuhara1, 4, K. Cho1,
K. Takenaka1, 4, M. Shiratani2, 4, M. Sekine3, 4,
and M. Hori3, 4 1Osaka
University, Japan 2Kyushu University, Japan 3Nagoya
University, Japan 4JST, CREST, Japan
Production and Control of Low-Damage Large-Area Plasmas for Advanced
Processing of Next-Generation Devices |
| 10:50-11:10 |
K. Nakamura
and H. Sugai
Chubu
University, Japan
Development of Electron-Based Plasma Monitoring for Precise Control of Plasma
Process |
| 11:10-11:30 |
A. Wakahara,
H. Okada, and Y. Furukawa
Toyohashi University of Technology, Japan
Nitride-based Optoelectronic Integrated Devices |
| 11:30-11.50 |
H. Toyoda
Nagoya
University, Japan
Low Temperature Microcrystalline Silicon Film Deposition by Microwave
High-density Plasma |
| 11:50-12.10 |
H. Kousaka and
N. Umehara
Nagoya
University, Japan
Novel DLC Synthesis Method Employing High-density Plasma sustained by
Microwave Propagation along Plasma-sheath Interface |
| 12:10-12:20 |
Closing
Closing Remarks M. Hori , Chairperson of the Organizing Committee |
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