ISPlasma 2009 MEXT (Ministry of Education, Culture, Sports, Science and Technology) Knowledge Cluster Initiative (The Second Stage)
~ Tokai Region Nanotechnology Manufacturing Cluster ~
ISPlasma 2009
  First International Symposium on
Advanced Plasma Science and its Applications
March 8-11, 2009
IB Building, Nagoya University, Nagoya, Japan

Organizing Committee Chairperson : Masaru Hori
Vice Director, Plasma Nanotechnology Research Center, Nagoya University

Program of the First International Symposium on Advanced Plasma Science and its Applications

3/8(Sun) | 3/9(Mon) | 3/9(Mon)Poster | 3/10(Tue) | 3/10(Tue)Poster | 3/11(Wed) | PDF Download/ Print

18:00-19:30 Welcome Party at Hotel Castle Plaza

9:00-9:10 Opening
Opening Address M. Matsuo, President of Aichi Science & Technology Foundation
Opening Remarks M. Hori , Chairperson of the Organizing Committee
9:10-9:30 The Second Stage Knowledge Cluster Initiative (Chair: S. Noda) O. Takenaka Aichi Science & Technology Foundation (ASTF), Japan
Tokai Region Nanotechnology Manufacturing Cluster Innovation of Environment-Friendly High-Level Functional Materials and Devices Leading the World
9:30-10:10 M. Hori Nagoya University, Japan
Advanced Plasma Fundamental Nanotechnology
10:10-10:30 Break
10:30-11:00   O. Takai Nagoya University, Japan
Development of Nanomaterials with Novel Surface Function
11:00-11:30 T. Egawa Nagoya Institute of Technology, Japan
High-efficient Optical, Power Materials and Devices
11:30-12:00 Y. Watanabe Nagoya Institute of Technology, Japan
Development of Nanocomposites Based on Interface Engineering -Collaboration with Other Relevant Ministries-
12:00-14:00 Lunch and Poster Session I
14:00-14:30 Plasma (1)
Plasma Researches in Advanced Plasma Nanoprocessing Research
Affiliations (Chair: K. Nakamura)
J.G. Han, Y.S. Choi, A. Matilainen, and S.B. Jin Sungkyunkwan University, Korea
Low Temperature Synthesis of SiO2 on Polymer Substrate by PECVD
14:30-15:00 U. Czarnetzki1, B.G. Heil1, J. Schulze1, Z. Donko2, R.P. Brinkmann1, and Th. Mussenbrock1
1Ruhr-University, Germany 2Hungarian Academy of Science, Hungary
A Novel Technique for Independent Control of Ion Energy and Flux in CCPs
15:00-15:30 M.J. Goeckner, C.T. Nelson, S.P. Sant, A.K. Jindal, E. Joseph, B-S. Zhou, G. Padron-Wells, B. Jarvis, C. Estrada, D. Urrabazo, R. Pierce, and L.J. Overzet The University of Texas at Dallas, U.S.A.
Plasma-surface Interactions
15:30-15:40 Break
15:40-16:10 Plasma (2)
Present Status and Perspectived in Advanced Plasma Nanomaterial Processing (Chair: Y. Watanabe)
G. Cunge1, E. Pargon1, O. Joubert1, L. Vallier1, T. Chevolleau1, R. Ramos1, E. Sungauer1, M. Martin1, O. Luere1, S. Barnola2, T. Morel2, and T. Lill3 1CNRS, France 2CEA-LETI, France 3Applied Materials, Sunnyvale, U.S.A.
Challenges and Future Prospects in Plasma Etching
16:10-16:40 J. Musil1,2 and P. Baroch1
1University of West Bohemia, Czech Republic 2Academy of Sciences of the Czech Republic, Czech Republic
Advanced Sputtering Discharges for Thin Film Deposition
16:40-17:10 S. Hosaka Tokyo Electron Ltd., Japan
Current R&D Status and Prospects of Si Semiconductor Plasma Processing Equipment System
17:30-19:00 Banquet
Restaurant Hananoki in Nagoya University

9:00-9:20 Towards the Development of Autonomic MBE Systems Based on Nitride Radical Sources and Radical Monitoring (Chair: K. Hiramatsu) M. Hori Nagoya University, Japan
Application of Advanced Plasma Technology for the Development of Autonomic MBE System
9:20-9:45 B. Daudin CEA-Grenoble, INAC/SP2M, France
Growth of GaN Heterostructures by Plasma-assisted Molecular Beam Epitaxy
9:45-10:10 Y. Nanishi and T. Yamaguchi Ritsumeikan University, Japan
Proposal of New InN Growth Method by MBE and Usefulness of This Method as Nitrogen Radical Beam Monitoring
10:10-10:30 Break
10:30-10:55   A. Yoshikawa, Y. Ishitani, N. Hashimoto, H. Saito, and S. Che Chiba University, Japan
Self-limiting Growth of -1ML-thick InN on Ga-polarity GaN by rf-plasma MBE
10:55-11:20 J.Y. Duboz, F. Semond, Y. Cordier, and J. Massies CRHEA-CNRS, France
MBE Epitaxy of GaN on Si
11:20-11:45 K. Kishino1,2,3, H. Sekiguchi1,3, and A. Kikuchi1,2,3 1Sophia University, Japan 2Sophia Nanotechnology Research Center, Japan 3CREST, Japan Science and Technology Agency, Japan
Regularly Arranged InGaN-based Nanocolumns and their Emission Color Control over Full Visible Range
11:45-12:00 H. Amano Meijo University, Japan
Expectation for Nitride-based Nanostructure for Future Light Emitting Devices
12:00-14:00 Lunch and Poster Session II
14:00-14:30 Towards the Advanced Plasma Nanotechnology Science and Research Foundation (with interpretation) (Chair: M. Sekine) J.C. Guibert CEA, MINATEC, France
MINATEC, A New Research Campus Concept for Nanoscience and Technology
C.D. Dilks Philadelphia Science Center, U.S.A.
Technology-LED Economic Development -Changing Tactics to Meet Desire Outcomes Science Center in Philadelphia, Pennsylvania – A Case Study
M. Kume PLACIA, Nagoya Urban Industries Promotion Corporation, Japan Activities of Plasma Technology Transfer to Industries in PLACIA
15:30-15:50 Break
15:50-17:00 Panel Discussion (with interpretation) ~Technology Transfer; Scheme and Management~
O. Takenaka, ASTF
M. Hori, Nagoya University, Japan
J.G. Han, Sungkyunkwan University, Korea
J.C. Guibert, MINATEC, France C.D. Dilks, Philadelphia Science Center, U.S.A.
M. Kume, PLACIA, Japan K. Matsumoto, TN EMC Ltd., Japan

9:00-9:20 Plasma (3)
The Front of Radical Control Plasma Nanoprocessing Research (Chair: H. Toyoda)  
T. Hara, R. Ichiki, and Y. Kubota Toyota Technological Institute, Japan
Modification of Metal Surface by Atomic Nitrogen
9:20-9:40 M. Hiramatsu Meijo University, Japan Carbon Nanowall Fabrication by Radical-Controlled Plasma Processing: Toward the Application for New Functional Devices
9:40-10:00 M. Shiratani1, S. Iwashita1, H. Miyata1, H. Matsuzaki1, K. Koga1, and M. Akiyama2 1Kyushu University, Japan 2Advanced Industrial Science and Technology (AIST), Japan
Plasma Manipulation of Nano-blocks and its Application to ULK Film Deposition
10:00-10:30 Break
10:30-10:50 Plasma (4)
The Front of Flexible Electronics Researches (Chair: M. Hiramatsu)
Y. Setsuhara1, 4, K. Cho1, K. Takenaka1, 4, M. Shiratani2, 4, M. Sekine3, 4, and M. Hori3, 4 1Osaka University, Japan 2Kyushu University, Japan 3Nagoya University, Japan 4JST, CREST, Japan
Production and Control of Low-Damage Large-Area Plasmas for Advanced Processing of Next-Generation Devices
10:50-11:10 K. Nakamura and H. Sugai Chubu University, Japan
Development of Electron-Based Plasma Monitoring for Precise Control of Plasma Process
11:10-11:30 A. Wakahara, H. Okada, and Y. Furukawa
Toyohashi University of Technology, Japan
Nitride-based Optoelectronic Integrated Devices
11:30-11.50 H. Toyoda Nagoya University, Japan
Low Temperature Microcrystalline Silicon Film Deposition by Microwave High-density Plasma
11:50-12.10 H. Kousaka and N. Umehara Nagoya University, Japan
Novel DLC Synthesis Method Employing High-density Plasma sustained by Microwave Propagation along Plasma-sheath Interface
12:10-12:20 Closing
Closing Remarks M. Hori , Chairperson of the Organizing Committee

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